ndf 0610 / NDS0610 general description features __ __________________________________________________________________________________________ ndf0610 absolute maximum ratings t a = 25c unless otherwise noted symbol parameter ndf0610 NDS0610 units v dss drain-source voltage -60 v v dgr drain-gate voltage (r gs < 1 m w ) -60 v v gss gate-source voltage - continuous 20 v - nonrepetitive (t p < 50 s) 30 v i d drain current - continuous -0.18 -0.12 a - pulsed -1 p d maximum power dissipation t a = 25 c 0.8 0.36 w derate above 25 c 5 2.9 mw/ o c t j ,t stg operating and storage temperature range -55 to 15 0 c t l maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds 300 c thermal characteristics r q ja thermal resistance, junction-to-ambient 200 350 c/w these p-c hannel enhancement mode power field effect transistors are produced using fairchild 's proprietary, high cell density, dmos technology. this very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. they can be used, with a minimum of effort, in most applications requiring up to 180ma dc and can deliver pulsed currents up to 1a. this product is particularly suited to low voltage applications requiring a low current high side switch. -0.18 and -0.12a, -60v. r ds(on ) = 10 w voltage controlled p-channel small signal switch high density cell design for low r ds(on) to-92 and sot-23 packages for both through hole and surface mount applications high saturation current g d s sot-23 nds 0610 s d g s g d to- 92 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
electrical characteristics (t a = 25c unless otherwise noted) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -10 a -60 v i dss zero gate voltage drain current v ds = -48 v , v gs = 0 v -1 a t j = 125c -200 a i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 10 na i gssr gate - body leakage, reverse v gs = -20 v, v ds = 0 v -10 na on characteristics (note 1) v gs (th) gate threshold voltage v ds = v gs , i d = -1 ma -1 -2.4 -3.5 v t j = 125c -0.6 -2.1 -3.2 r ds(on) static drain-source on-resistance v gs = -10 v, i d = -0.5 a 3.6 10 w t j = 125c 5.9 16 v gs = -4.5 v, i d = -0.25 a 5.2 20 t j = 125c 7.9 30 i d (on) on-state drain current v gs = -10 v, v ds = -10 v -0.6 -1.6 a v gs = -4.5 v, v ds = -10 v -0.35 g fs forward transconductance v ds = -10 v, i d = -0.1 a 70 170 ms dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz 40 60 pf c oss output capacitance 11 25 pf c rss reverse transfer capacitance 3.2 5 pf switching ch aracteristics (note 1) t d(on ) turn - on delay time v dd = -25 v, i d = -0.18 a , v gs = -10 v, r gen = 25 w 7 10 ns t r turn - on rise time 5 15 ns t d(off ) turn - off delay time 13 15 ns t f turn - off fall time 10 20 ns q g total gate charge v ds = -48 v , i d = -0.5 a , v gs = -10 v 1.43 nc q gs gate-source charge 0.6 nc q gd gate-drain charge 0.25 nc drain-source diode characteristics i s maximum continuous source current -0.18 a i sm maximum pulse source current (note 1) -1 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0.5 a (note 1) -1.2 -1.5 v t j = 125c -0.98 -1.3 t rr reverse recovery time v gs = 0 v, i s = -0.5 a , di f /dt = 100 a/s 40 ns i rr reverse recovery current 2.8 a note: 1. pulse test: pulse width < 300 m s, duty cycle < 2.0%. ndf 0610 / NDS0610 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
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